TSM6502CR RLG


TSM6502CR RLG

Part NumberTSM6502CR RLG

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM6502CR RLG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1159pF @ 30V, 930pF @ 30V
Power - Max40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

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